Magnesium Silicide, Mg2Si

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Magnesium Silicide, Mg2Si

Mg2Si tsuas yog qhov sib xyaw ruaj khov ntawm Mg Si binary system. Nws muaj cov yam ntxwv ntawm siab melting point, siab hardness thiab siab elastic modulus. Nws yog txoj kab nqaim nqaim sib txawv ntawm cov n-hom khoom sib luag. Nws muaj cov ntawv thov tseem ceeb nyob rau hauv cov khoom siv optoelectronic, cov khoom siv hluav taws xob, cov khoom siv hluav taws xob, lub tshuab laser, cov khoom siv hluav taws xob, kev sib txuas lus kub tswj kev sib txuas lus thiab lwm cov teb.


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Suav lub npe magnesium silicide
Lub Npe Askiv: magnesium silicon
Kuj tseem hu ua hlau puag
Cov tshuaj formula mg Ψ Si
Tus phaus molecular yog 76.71 CAS
Tus xov tooj ua txhaum 22831-39-6
Melting point 1102 ℃
Insoluble hauv dej thiab denser dua li dej
Qhov ceev: 1.94g / cm
Daim Ntawv Thov: Mg2Si tsuas yog cov sib xyaw ruaj khov ntawm Mg Si binary system. Nws muaj cov yam ntxwv ntawm siab melting point, siab hardness thiab siab elastic modulus. Nws yog txoj kab nqaim nqaim sib txawv ntawm cov n-hom khoom sib luag. Nws muaj cov ntawv thov tseem ceeb nyob rau hauv cov khoom siv optoelectronic, cov khoom siv hluav taws xob, cov khoom siv hluav taws xob, cov khoom siv hluav taws xob, lub tshuab hluav taws xob, cov khoom siv hluav taws xob, kev sib txuas lus kub tswj thiab lwm cov teb.
Magnesium silicide (Mg2Si) yog ib qho khoom siv hluav taws xob ncaj qha nrog kev sib txawv ntawm band. Tam sim no, kev lag luam microelectronics yog qhov tseem ceeb ntawm Si cov ntaub ntawv. Cov txheej txheem ntawm kev loj hlob Mg2Si nyias zaj duab xis ntawm Si substrate yog sib xws nrog Si cov txheej txheem. Yog li no, Mg2Si / Si Heterojunction qauv muaj cov kev tshawb fawb muaj txiaj ntsig. Hauv daim ntawv no, ib puag ncig-phooj ywg Mg2Si nyias zaj duab xis tau npaj ntawm Si txheej thiab txheej insulating substrate los ntawm magnetron sputtering. Cov txiaj ntsig ntawm kev ua tsis taus zaj duab xis mg rau qhov zoo ntawm Mg2Si nyias zaj duab xis tau kawm. Ntawm lub hauv paus no, kev npaj thev naus laus zis ntawm Mg2Si raws li heterojunction LED cov cuab yeej tau kawm, thiab cov khoom siv hluav taws xob thiab kho qhov muag ntawm Mg2Si nyias zaj duab xis tau kawm. Ua ntej, Mg zaj duab xis tau muab tso rau Si substrates los ntawm magnetron sputtering nyob rau hauv chav tsev kub, Si zaj duab xis thiab Mg zaj duab xis tau muab tso rau ntawm insulating iav substrates, thiab tom qab ntawd Mg2Si zaj duab xis tau npaj los ntawm kev kho cua sov hauv lub tshuab nqus tsev qis (10-1pa-10-2pa). Cov txiaj ntsig ntawm XRD thiab SEM qhia tau tias ib theem Mg2Si nyias zaj duab xis yog npaj los ntawm annealing ntawm 400 ℃ rau 4h, thiab cov npaj Mg2Si nyias zaj duab xis muaj ntom, zoo ib yam thiab cov nplej tsis tu ncua, du nto thiab zoo crystallinity. Thib ob, qhov tshwm sim ntawm cov tuab ntawm Mg zaj duab xis ntawm kev loj hlob ntawm Mg2Si semiconductor zaj duab xis thiab kev sib raug zoo ntawm cov tuab ntawm Mg zaj duab xis thiab tuab ntawm Mg2Si zaj duab xis tom qab annealing tau kawm. Cov txiaj ntsig pom tau tias thaum cov tuab ntawm Mg zaj duab xis yog 2.52 μ m thiab 2.72 μ m, nws qhia tau zoo crystallinity thiab flatness. Lub thickness ntawm Mg2Si zaj duab xis nce nrog qhov nce ntawm Mg thickness, uas yog kwv yees 0.9-1.1 npaug ntawm uas ntawm Mg. Txoj kev kawm no yuav ua lub luag haujlwm tseem ceeb hauv kev coj tus qauv tsim ntawm cov cuab yeej raws li Mg2Si nyias zaj duab xis. Thaum kawg, tsim hluav taws xob ntawm Mg2Si raws li heterojunction lub teeb ci hluav taws xob khoom siv yog kawm. Mg2Si / Si thiab Si / Mg2Si / Si Heterojunction LED cov khoom ua tau tsim los ntawm Si substrate.

Cov khoom hluav taws xob thiab cov khoom siv ntawm Mg2Si / Si thiab Si / Mg2Si / Si heterostructures tau kawm los ntawm plaub qhov txheej txheem probetest, semiconductor yam ntxwv ntsuas thiab ntsuas / hloov fluorescence spectrometer. Cov txiaj ntsig tau qhia tias: qhov tiv taus thiab daim ntawv tsis kam ntawm Mg2Si nyias zaj duab xis poob nrog qhov nce ntawm Mg2Si tuab; Mg2Si / Si thiab Si / Mg2Si / Si heterostructures qhia zoo yam ntxwv tsis ua haujlwm zoo, thiab ntawm qhov hluav taws xob ntawm Si / Mg2Si / Si ob chav heterostructure qauv yog li 3 V; qhov kev siv photoluminescence ntawm Mg2Si / n-Si heterojunction ntaus ntawv yog qhov siab tshaj plaws thaum nthwv cua yog 1346 nm. Thaum nthwv dej sib npaug yog 1346 nm, kev siv photoluminescence ntawm Mg2Si nyias zaj duab xis npaj ntawm insulating substrates yog qhov ntau tshaj; piv nrog photoluminescence ntawm Mg2Si nyias zaj duab xis npaj ntawm nyias substrates, Mg2Si cov yeeb yaj kiab npaj ntawm siab-purity quartz substrate muaj luminescence kev ua tau zoo dua thiab infrared monochromatic luminescence cov yam ntxwv.


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